Cadmium Arsenide: Alloyed Semiconductor Quantum Dots and Crystals - Fabrication and Electrical Properties
Mentor 1
Nikolai Kouklin
Location
Union Wisconsin Room
Start Date
27-4-2018 1:00 PM
Description
Primarily focusing on carrying out vapor-transport growth and in-situ doping Cadmium Arsenide materials including thin films and bulk crystals. The fabricated samples are then subject to various tests including FTIR, PL, RAMAN, transport and other low-noise I-V measurments. The research also includes pre-fabricated Cadmium Arsenide alloyed semiconductor Quantum Dots in which are also subject to the same tests. Main intention of the research is to gain insight into the crystal structure and electronic properties of Cadmium Arsenide samples and gain hands-on experience in the emerging area of topological insulators/new generation of quantum materials and their charterization.
Cadmium Arsenide: Alloyed Semiconductor Quantum Dots and Crystals - Fabrication and Electrical Properties
Union Wisconsin Room
Primarily focusing on carrying out vapor-transport growth and in-situ doping Cadmium Arsenide materials including thin films and bulk crystals. The fabricated samples are then subject to various tests including FTIR, PL, RAMAN, transport and other low-noise I-V measurments. The research also includes pre-fabricated Cadmium Arsenide alloyed semiconductor Quantum Dots in which are also subject to the same tests. Main intention of the research is to gain insight into the crystal structure and electronic properties of Cadmium Arsenide samples and gain hands-on experience in the emerging area of topological insulators/new generation of quantum materials and their charterization.
